A Broadband Outphasing GaN Power Amplifier Based on Reconfigurable Output Combiner
A Broadband Outphasing GaN Power Amplifier Based on Reconfigurable Output Combiner
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DOI：
10.1109/tmtt.2023.3299649
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发表时间：
2024-02
影响因子：
4.3
通讯作者：
Weiwei Wang;Shiping Li;Shichang Chen;Jialin Cai;Yuanchun Li;Xinyue Zhou;G. Crupi;Gaofeng Wang;Q. Xue
中科院分区：
文献类型：
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作者：
Weiwei Wang;Shiping Li;Shichang Chen;Jialin Cai;Yuanchun Li;Xinyue Zhou;G. Crupi;Gaofeng Wang;Q. Xue
介绍了一种基于可重构输出合路器的宽带异相功率放大器的设计。采用两个加载变容管的T型匹配结构代替传统结构中的传输线。为了具有宽带性能，当频率改变时调节施加到变容二极管的偏置电压，确保异相操作所需的适当相移量。这种技术补偿了传统组合器中固有的频率色散效应。此外，为了在大频带内为子放大器提供正确的电抗补偿和阻抗，还采用了后匹配网络（PMN）。这些设计策略有助于提高整个OPA的带宽和漏极效率。为了演示，使用两个10-W GaN HEMT晶体管成功地实现了原型电路。在6 dB回退（BO）功率下，在2.4至2.8 GHz范围内实现了超过49.3%的DE，占15.4%的分数带宽。此外，在同一频带中，最小63.6% DE保持饱和。
This article introduces a broadband outphasing power amplifier (OPA) design in virtue of a reconfigurable output combiner. Two T-type matching structures loaded with varactors are applied to replace the transmission lines in the conventional architecture. To have broadband performance, the bias voltage applied to the varactors is adjusted when the frequency changes, ensuring proper phase shifting amounts required for outphasing operation. This technique compensates for the frequency dispersion effects inherent in the conventional combiner. Besides, to provide the subamplifiers with correct reactance compensation and impedance in a large frequency band, a postmatching network (PMN) is further employed. These design strategies help to improve the bandwidth and drain efficiency (DE) of the whole OPA. For demonstration, a prototype circuit is successfully implemented using two 10-W GaN HEMT transistors. At 6-dB back-off (BO) power, over 49.3% DE is achieved from 2.4 to 2.8 GHz, accounting for 15.4% fractional bandwidth. In addition, a minimum of 63.6% DE is maintained at saturation in the same frequency band.