Quantum Critical Transport near the Mott Transition
Quantum Critical Transport near the Mott Transition
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DOI：
10.1103/physrevlett.107.026401
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发表时间：
2011-07-05
影响因子：
8.6
通讯作者：
Dobrosavljevic, V.
中科院分区：
文献类型：
--
作者：
Terletska, H.;Vucicevic, J.;Dobrosavljevic, V.
我们对半填充单带哈伯德模型高温交叉区域的非相干传输进行了系统研究。我们证明电阻率曲线族显示出 rho(T, delta U) = rho(c)(T)f(T/T(0)(delta U)) 形式的特征量子临界标度，其中 T(0)(delta U) 类似于垂直条 delta U 垂直条(z nu)，而 rho(c)(T) 类似于 T。相应的 beta 函数显示出类似于 ln(rho(c)/rho) 的“强耦合”形式 beta，反映了特殊的镜像缩放曲线的对称性。这种行为与一些实验结果惊人地相似，表明莫特量子临界性可能是许多系统中金属-绝缘体转变附近不寻常输运现象背后的基本机制。
We perform a systematic study of incoherent transport in the high temperature crossover region of the half filled one-band Hubbard model. We demonstrate that the family of resistivity curves displays characteristic quantum critical scaling of the form rho(T, delta U) = rho(c)(T)f(T/T(0)(delta U)), with T(0)(delta U) similar to vertical bar delta U vertical bar(z nu), and rho(c)(T) similar to T. The corresponding beta function displays a "strong coupling" form beta similar to ln(rho(c)/rho), reflecting the peculiar mirror symmetry of the scaling curves. This behavior, which is surprisingly similar to some experimental findings, indicates that Mott quantum criticality may be acting as the fundamental mechanism behind the unusual transport phenomena in many systems near the metal-insulator transition.