Properties of W–N and Mo–N films prepared by reactive sputtering
Properties of W–N and Mo–N films prepared by reactive sputtering
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反应溅射制备W-N和Mo-N薄膜的性能
DOI：
10.1116/1.576882
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
D. Dove
中科院分区：
文献类型：
--
作者：
K. Shih;D. Dove
报道了反应性直流磁控溅射法制备22 μm厚W-N薄膜的结构和性能。结果表明，沉积膜的性能不仅与氩气-氮气混合物中的氮气分压有关，还与溅射过程中的总气压和输入功率有关。随着氮气分压的增加，沉积速率降低，但总压和输入功率越高，沉积速率越快。电阻率随氮气分压增大而增大，但在总气压较低、输入功率较大时电阻率减小。根据溅射条件的不同，W-N薄膜的硬度可在600 ~ 3000 kg/mm2之间变化。硬度随氮气分压的增大而增大，总压和输入功率越大，硬度越大。当溅射过程中氩气-氮气混合物中氮的含量低于10%，总气压<40 mTorr时，X射线衍射未发现氮相的存在。当含氮量大于30%、含氮量大于10%、总气压大于40mtorr时，均可观察到W2N。这些结果与微探针测定的成分一致。本文还报道了用直流和射频磁控反应溅射法制备Mo-N薄膜的类似研究。已观察到Mo-N膜的硬度值超过2200 kg/mm2。报道了反应性直流磁控溅射法制备22 μm厚W-N薄膜的结构和性能。结果表明，沉积膜的性能不仅与氩气-氮气混合物中的氮气分压有关，还与溅射过程中的总气压和输入功率有关。随着氮气分压的增加，沉积速率降低，但总压和输入功率越高，沉积速率越快。电阻率随氮气分压增大而增大，但在总气压较低、输入功率较大时电阻率减小。根据溅射条件的不同，W-N薄膜的硬度可在600 ~ 3000 kg/mm2之间变化。硬度随氮气分压的增大而增大，总压和输入功率越大，硬度越大。当溅射过程中氩气-氮气混合物中氮的含量低于10%，总气压<40时，X射线衍射未发现氮相的存在。
The structure and properties of W–N films up to 22 μm thick prepared by a reactive dc magnetron sputtering process are reported. It has been found that the properties of the deposited films not only depend on the nitrogen partial pressure in the argon–nitrogen gas mixtures but also on total gas pressure and input power during sputtering. The rate of deposition decreased with increase of nitrogen partial pressure, but was higher at higher total pressure and input power. The resistivity increased with nitrogen partial pressure but was lower at lower total gas pressure and higher input power. The hardness of W–N films could be varied from 600 to 3000 kg/mm2 depending on sputtering conditions. The hardness, in general, increased with nitrogen partial pressure with higher value at higher total pressure and input power. X‐ray diffraction did not indicate presence of nitride phases when the content of nitrogen in the argon–nitrogen gas mixtures during sputtering was below 10%, and the total gas pressure was <40 mTorr. W2N was observed when the nitrogen content was over 30% and also when the nitrogen content was over 10% and total gas pressure was over 40 mTorr. These results are consistent with composition determined by the microprobe measurements. Similar studies on Mo–N films made by dc and rf magnetron reactive sputtering methods are reported. Hardness values for the Mo–N films of more than 2200 kg/mm2 have been observed.The structure and properties of W–N films up to 22 μm thick prepared by a reactive dc magnetron sputtering process are reported. It has been found that the properties of the deposited films not only depend on the nitrogen partial pressure in the argon–nitrogen gas mixtures but also on total gas pressure and input power during sputtering. The rate of deposition decreased with increase of nitrogen partial pressure, but was higher at higher total pressure and input power. The resistivity increased with nitrogen partial pressure but was lower at lower total gas pressure and higher input power. The hardness of W–N films could be varied from 600 to 3000 kg/mm2 depending on sputtering conditions. The hardness, in general, increased with nitrogen partial pressure with higher value at higher total pressure and input power. X‐ray diffraction did not indicate presence of nitride phases when the content of nitrogen in the argon–nitrogen gas mixtures during sputtering was below 10%, and the total gas pressure was <40 ...