Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction
Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction
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DOI：
10.1103/physrevlett.93.216602
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发表时间：
2004-11-19
影响因子：
8.6
通讯作者：
Ohno, H
中科院分区：
文献类型：
--
作者：
Chiba, D;Sato, Y;Ohno, H
基于（Ga,Mn）As/GaAs/(Ga,Mn)As磁性隧道结的铁磁半导体在30k下实现了电流驱动的磁化反转。在矩形1.5x0.3 μ m(2)器件上的磁阻测量和电流脉冲应用表明，尽管p型半导体系统中存在自旋轨道相互作用，但在1.1-2.2x10(5) a /cm(2)的低临界电流密度下，磁化开关仍然发生。讨论了产生这种效应的可能机制。
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5x0.3 mum(2) device revealed that magnetization switching occurs at low critical current densities of 1.1-2.2x10(5) A/cm(2) despite the presence of spin-orbit interaction in the p-type semiconductor system. Possible mechanisms responsible for the effect are discussed.