Mesoscopic conductance fluctuations in InAs nanowire-based SNS junctions
Mesoscopic conductance fluctuations in InAs nanowire-based SNS junctions
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DOI：
10.1088/1367-2630/11/11/113025
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发表时间：
2009-11-13
影响因子：
3.3
通讯作者：
Nygard, J.
中科院分区：
文献类型：
--
作者：
Jespersen, T. S.;Polianski, M. L.;Nygard, J.
本文报道了超导/正常/超导（SNS）器件Nb/InAs-纳米线/Nb中介观电导涨落的系统实验研究。这些波动远远超过它们在正常状态下的值，并且即使在低温状态下也强烈依赖于温度。这种依赖性归因于高灵敏度的完美的导电通道的退相和SNS波动，从而提供了一个敏感的探针的退相在正常的运输无法检测到it. Further的制度，电导波动是强烈的非线性偏置电压和揭示subgap结构。实验结果定性解释的多重Andreev反射在混沌量子点与不完美的接触。
We report a systematic experimental study of mesoscopic conductance fluctuations in superconductor/normal/superconductor (SNS) devices Nb/InAs-nanowire/Nb. These fluctuations far exceed their value in the normal state and strongly depend on temperature even in the low-temperature regime. This dependence is attributed to high sensitivity of perfectly conducting channels to dephasing and the SNS fluctuations thus provide a sensitive probe of dephasing in a regime where normal transport fails to detect it. Further, the conductance fluctuations are strongly nonlinear in bias voltage and reveal subgap structure. The experimental findings are qualitatively explained in terms of multiple Andreev reflections in chaotic quantum dots with imperfect contacts.