Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer
Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer
复制标题
DOI：
10.1007/s11432-015-5454-z
复制
发表时间：
2016-04-01
影响因子：
8.8
通讯作者：
Luo, Xiaorong
中科院分区：
文献类型：
--
作者：
Xiong, Jiayun;Yang, Chao;Luo, Xiaorong
提出了一种新型的带有电荷缓冲层的降低表面场（RESURF）AlGaN/GaN高电子迁移率晶体管（HEMT）。研究了其击穿机理和通态特性。HEMT的特点是在漂移区和栅极区（FDG）下的GaN缓冲层中埋有氟离子。FDG在漂移区（FD）下方的部分不仅降低了栅极边缘处的电场（E-field）峰值，而且通过辅助耗尽增强了漂移区中的电场，导致击穿电压（BV）的显著改善。此外，FDG在栅极（FG）下的部分增强了背势垒，有效地防止了电子从源极注入形成漏电流，从而获得了更高的BV。所提出的HEMT的BV从具有相同尺寸参数的常规AlGaN/GaN HEMT的230 V急剧增加到750 V，并且比导通电阻（R-on，R-sp）仅从1.01 m Ω. cm（2）增加到1.21 m Omega.cm.
A novel reduced surface field (RESURF) AlGaN/GaN high electron mobility transistor (HEMT) with charged buffer layer is proposed. Its breakdown mechanism and on-state characteristics are investigated. The HEMT features buried Fluorine ions in the GaN buffer layer both under the Drift and the Gate region (FDG). The section of FDG under the drift region (FD) not only reduces the electric field (E-field) peak at the gate edge but also enhances the E-field in the drift region by the assisted depletion, leading to a significant improvement in breakdown voltage (BV). Moreover, the section of FDG under the gate (FG) enhances the back barrier and effectively prevents electron injecting from the source to form leakage current, thus a higher BV is achieved. The BV of the proposed HEMT sharply increases to 750 V from 230 V of conventional AlGaN/GaN HEMT with the same dimensional parameters, and the specific on-resistance (R-on,R-sp) just increases to 1.21 m Omega.cm(2) from 1.01 m Omega.cm(2).