Charge collection properties of a depleted monolithic active pixel sensor using a HV-SOI process
Charge collection properties of a depleted monolithic active pixel sensor using a HV-SOI process
复制标题
使用 HV-SOI 工艺的耗尽型单片有源像素传感器的电荷收集特性
DOI：
10.1088/1748-0221/11/01/c01063
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发表时间：
2016
影响因子：
1.3
通讯作者：
H. Pernegger
中科院分区：
文献类型：
--
作者：
S. Fernandez;M. Backhaus;M. Fernández;C. Gallrapp;T. Hemperek;T. Kishishita;H. Krueger;M. Moll;C. Padilla;H. Pernegger
基于商用高压和/或高电阻率CMOS工艺的新像素探测器概念正在研究中，作为HL-LHC升级中ATLAS内部跟踪器内层和外层的可能候选者。基于厚膜SOI技术的耗尽型单片有源像素传感器正被广泛研究。该特定技术提供了双阱结构，其将薄栅极氧化物晶体管与掩埋氧化物（BOX）屏蔽。此外，晶体管和BOX之间的距离比传统的SOI技术大一个数量级，使该技术有望克服其主要局限性，如辐射硬度或背栅效应。它的辐射硬度总电离剂量（TID）和不存在背栅效应高达700 Mrad已被测量和出版[1]。该工艺允许使用高电压（高达300 V），用于部分耗尽衬底。该工艺允许在更高的电阻率下制造，因此在减薄后可以实现完全耗尽的衬底。本文介绍了在实验室中用不同的技术，用放射源和边缘瞬态电流技术，对未辐照和辐照样品的BOX下面的硅块体的电荷收集特性的结果。
New pixel detector concepts, based on commercial high voltage and/or high resistivity CMOS processes, are being investigated as a possible candidate to the inner and outer layers of the ATLAS Inner Tracker in the HL-LHC upgrade. A depleted monolithic active pixel sensor on thick film SOI technology is being extensively investigated for that purpose. This particular technology provides a double well structure, which shields the thin gate oxide transistors from the Buried Oxide (BOX). In addition, the distance between transistors and BOX is one order of magnitude bigger than conventional SOI technologies, making the technology promising against its main limitations, as radiation hardness or back gate effects. Its radiation hardness to Total Ionizing Dose (TID) and the absence of back gate effect up to 700 Mrad has been measured and published [1]. The process allows the use of high voltages (up to 300V) which are used to partially deplete the substrate. The process allows fabrication in higher resistivity, therefore a fully depleted substrate could be achieved after thinning. This article shows the results on charge collection properties of the silicon bulk below the BOX by different techniques, in a laboratory with radioactive sources and by edge Transient Current Technique, for unirradiated and irradiated samples.