Electrical characterization of DC sputtered ZnO/p-Si heterojunction
Electrical characterization of DC sputtered ZnO/p-Si heterojunction
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DOI：
10.1016/j.jallcom.2011.10.005
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发表时间：
2012-02
影响因子：
6.2
通讯作者：
Y. Ocak
中科院分区：
文献类型：
--
作者：
Y. Ocak
采用直流溅射法在p-Si半导体和玻璃衬底上制备了ZnO薄膜。利用紫外可见光谱和X射线衍射（XRD）对ZnO薄膜进行了分析。通过器件在黑暗和100 mW/cm 2、AM 1.5光照下的电流-电压（I-V）、电容-电压（C-V）和电容-频率（C-f）测量了ZnO/p-Si异质结的电学和光电参数。器件具有良好的整流特性，理想因子为1.35，势垒高度为0.76eV，串联电阻为6.69kΩ。可以看出，异质结的I-V，C-V和C-f测量对光具有良好的灵敏度，并且该器件表现为光电二极管和光电电容器。
ZnO thin films were formed on a p-Si semiconductor and a glass by DC sputtering technique. The ZnO films were analyzed using UV–vis spectroscopy and X-ray diffraction (XRD). Electrical and photoelectrical parameters of ZnO/p-Si heterojunction were determined by current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f) of the device in dark and under the light with 100mW/cm2and AM 1.5 illumination property. The device had a good rectifying property with 1.35 ideality factor, 0.76eV barrier height and 6.69kΩ series resistance values. It was seen that I–V, C–V and C–f measurements of the heterojunction had good sensitivity to the light and the device behaves as a photodiode and a photocapacitor.