Time response measurement of pulsed electron beam from InGaN photocathode
Time response measurement of pulsed electron beam from InGaN photocathode
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InGaN 光电阴极脉冲电子束的时间响应测量
DOI：
10.1116/6.0002122
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
T. Nishitani
中科院分区：
文献类型：
--
作者：
Daiki Sato;H. Shikano;A. Koizumi;T. Nishitani
具有负电子亲和表面的半导体光电阴极的光电流可以由激发激光功率任意控制。将这一特性应用于扫描电子显微镜，可以在样品的任何位置任意控制探针电流。为了高速控制探针电流，需要具有快速时间响应的光电阴极。本研究使用InGaN光电阴极产生脉冲电子束，并研究其时间响应。观察到脉冲电子束的脉宽为3.8 ns，电流密度为8.1 × 103 A cm−2，光电流的上升和下降时间分别为1.7和2.0 ns。结果表明，尽管存在激光功率时间响应的瓶颈，但InGaN光电阴极产生的电子束可以在270 MHz的扫描速度下逐像素地控制探针电流。
The photocurrent from a semiconductor photocathode with a negative-electron affinity surface can be arbitrarily controlled by the excitation laser power. Applying this characteristic to a scanning electron microscope allows the probe current to be arbitrarily controlled at any location on the sample. A photocathode with a fast time response is required to control the probe current at high speed. This study used an InGaN photocathode for pulsed electron beam generation and investigated its time response. A pulsed electron beam with 3.8 ns pulse width and 8.1 × 103 A cm−2 current density was observed, and the rise and fall times of the photocurrent were found to be 1.7 and 2.0 ns, respectively. The results show that despite the bottleneck of the time response of the laser power, the InGaN photocathode generates an electron beam that can control the probe current on a pixel-by-pixel for a 270 MHz scan speed.
影响因子：
3.2
作者：
Hideo Morishita;T. Ohshima;M. Kuwahara;Y. Ose;T. Agemura
通讯作者：
Hideo Morishita;T. Ohshima;M. Kuwahara;Y. Ose;T. Agemura