Kondo-hole conduction in the La-doped Kondo insulator Ce 3 Bi 4 Pt 3
Kondo-hole conduction in the La-doped Kondo insulator Ce 3 Bi 4 Pt 3
复制标题
La掺杂近藤绝缘体Ce 3 Bi 4 Pt 3 中的近藤空穴传导
DOI：
10.1103/physrevb.77.115134
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发表时间：
2008
影响因子：
3.7
通讯作者：
P. Schlottmann
中科院分区：
文献类型：
--
作者：
T. Pietrus;H. Löhneysen;P. Schlottmann
The resistivity, Hall constant, specific heat, and magnetic susceptibility of the doped Kondo insulator ${({\mathrm{Ce}}_{1\ensuremath{-}x}{\mathrm{La}}_{x})}_{3}{\mathrm{Bi}}_{4}{\mathrm{Pt}}_{3}$ are studied as a function of temperature and $x$. Already at $x=0.006$, the alloy behaves like a metal, so that the metal-insulator transition in the impurity band must occur at a lower concentration. Our data allow to determine the effective mass ${m}^{*}$ and the carrier concentration $n$ separately. After a strong initial increase of $n(x)$, the carrier concentration remains nearly constant between $x=0.1$ and 0.5. The effective mass in the metallic state initially increases with $x$ and reaches a maximum of ${m}^{*}\ensuremath{\approx}100{m}_{0}$ at $x=0.3$. The scattering time $\ensuremath{\tau}$ as determined from the Drude formula decreases drastically between $x=0.006$ and 0.1, has a minimum at about $x=0.1$, and then a maximum at $x=0.3$. Surprisingly, ${m}^{*}∕\ensuremath{\tau}$ is nearly constant for the entire alloy range for $x\ensuremath{\geqslant}0.1$.
