Improved Numerical Model of Metal-Semiconductor-Metal Photodetector
Improved Numerical Model of Metal-Semiconductor-Metal Photodetector
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发表时间：
2007
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通讯作者：
Lu Yu-tian
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作者：
Lu Yu-tian
基于E.Sano的金属-半导体-金属光电探测器(MSM-PD)模型，提出了一种改进的数值模型。该模型采用并联电流源和电容建立，研究了吸收层中多余电子和光子的总和，求解了速率方程，计算了电容，推导了暗电流与端电压的非线性关系，改进了常规模型中暗电流的线性计算。给出了光电电流的数学表达式。Matlab仿真分析表明计算简化，精度更高。该模型表示了在一定偏置和光照条件下光电流的变化，展示了器件中光电子的传输。该模型还可用于微弱信号的测量和模拟。
Based on E.Sano′s metal-semiconductor-metal photodetector(MSM-PD) model,an improved numerical model is presented.The model is built with parallel current sources and capacitance.The sum of excess electron and photon in absorption layer is studied,and the rate equations are solved.The capacitance is calculated,the nonlinear relationship between the dark current and the terminal voltage is derived,and the linear calculation of the dark current in conventional model is improved.The mathematical expression of the photoelectric current is presented.The simulation analysis by Matlab indicates the calculation is simplified with a higher precision.This model represents the change of photoelectric current under some bias and illumination conditions,and shows the transfer of photoelectron in devices.This model can also be used in measuring and simulating weak signals.