Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing
Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing
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DOI：
10.1063/1.3573768
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发表时间：
2011-04-15
影响因子：
3.2
通讯作者：
Prawer, S.
中科院分区：
文献类型：
--
作者：
Orwa, J. O.;Santori, C.;Prawer, S.
负电荷氮空位中心（NV）是金刚石中研究最多的光学中心，在量子信息科学中有着重要的应用。在量子和传感应用中集成NV中心的许多建议依赖于它们在超纯宿主材料中的定制制造。在本研究中，我们采用离子注入的方法将氮可控地引入高纯、低氮的化学气相沉积金刚石样品中。研究了NV中心的性质与注入温度、退火温度和注入通量的关系。我们比较了植入的NV中心与存在于大部分生长样品深处的天然NV中心。植入NV中心的结果是有希望的，但在这个阶段，深层天然NV中心具有整体优越的光学特性。特别是，在2000℃8 GPa稳定压力下退火得到的植入的NV中心显示出0.17 nm的系综线宽，而在1000℃退火后的系综线宽为0.61 nm。在相同的温度范围内，系综NV-/NV0比增加了大约5倍，尽管这伴随着NV数量的总体减少。(C) 2011年美国物理研究所。(doi: 10.1063/1.3573768)
The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 degrees C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 degrees C. Over the same temperature range, the ensemble NV-/NV0 ratio increased by a factor of similar to 5, although this was accompanied by an overall decrease in the NV count. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573768]