Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates
Carrier Trapping Effects on Forward Characteristics of SiC p-i-n Diodes Fabricated on High-Purity Semi-Insulating Substrates
复制标题
载流子捕获对高纯半绝缘衬底上 SiC p-i-n 二极管正向特性的影响
DOI：
10.1109/ted.2022.3154673
复制
发表时间：
2022
影响因子：
3.1
通讯作者：
Kimoto Tsunenobu
中科院分区：
文献类型：
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作者：
Takahashi Katsuya;Tanaka Hajime;Kaneko Mitsuaki;Kimoto Tsunenobu
研究了高纯半绝缘碳化硅（SiC）衬底中高浓度深能级对器件特性的影响。采用离子注入工艺在HPSI 4 H-SiC衬底上制备了垂直p-i-n二极管。所制造的二极管显示出良好的整流。采用漂移扩散（DD）模拟方法分析了器件的正向电流-电压（-）特性，并将深能级同时作为复合中心和载流子陷阱。DD模拟表明，高浓度的载流子陷阱平坦的电位分布在i型区域，因此，在低偏压区的复合电流和理想因子增加。在295-600 K温度范围内，模拟的高陷阱密度下的特性与实验结果吻合较好。
Carrier trapping effects of high-concentration deep levels in high-purity semi-insulating (HPSI) silicon carbide (SiC) substrates on device characteristics were investigated. Vertical p-i-n diodes were fabricated on HPSI 4H-SiC substrates with ion implantation processes. The fabricated diodes showed good rectification. The experimental forward current–voltage (–) characteristics were analyzed by using drift-diffusion (DD) simulation that considers deep levels both as recombination centers and carrier traps. The DD simulation revealed that high-concentration carrier traps flatten the potential distribution in the i-type region and, therefore, increase the recombination current and ideality factor in the low-bias region. The simulated–characteristics assuming a high trap density ofshowed good agreement with experimental ones in the temperature range of 295–600 K.