Deep-ultraviolet localized surface plasmon resonance using Ga nanoparticles
Deep-ultraviolet localized surface plasmon resonance using Ga nanoparticles
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DOI：
10.1364/ome.456061
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发表时间：
2022-07-01
影响因子：
2.8
通讯作者：
Okamoto, Koichi
中科院分区：
文献类型：
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作者：
Endo, Soshi;Shimanoe, Kohei;Okamoto, Koichi
利用镓纳米粒子(NPs)实现了局域表面等离子体共振(LSPR)，并在整个深紫外(DUV)波长范围内进行了调谐。采用气相沉积和热退火相结合的方法，在没有自上而下的纳米加工技术的情况下，制备了具有纳米半球结构的Ga纳米颗粒。我们通过高温热退火的方法成功地制备了Ga2O3NPs。用Al_2O_3薄膜包覆纳米镓，可防止氧化，提高低熔点、常温下不稳定的纳米镓的稳定性，使其在器件中得到应用。此外，我们还在铝镜衬底上制备了一种新型的纳米颗粒结构，这种结构可以应用于LSPR增强发光材料和器件。(C)根据Optica开放获取出版协议条款的2022 Optica出版集团
Localized surface plasmon resonance (LSPR) with Ga nanoparticles (NPs) was achieved and tuned over the entire deep-ultraviolet (DUV) wavelength range. Ga NPs with nano hemisphere structures were fabricated by combining vapor deposition and thermal annealing without top-down nanofabrication technology. We successfully fabricated Ga2O3 NPs by thermally annealing Ga NPs at high temperatures. The coating of Ga NPs with Al2O3 thin films prevented oxidation and improved the robustness of Ga NPs, which have a low melting point and are unstable at room temperature, enabling device applications. Furthermore, we fabricated a new NP structure with Ga or Ga2O3 located on Al mirror substrates, which can be applied to LSPR-enhanced light-emitting materials and devices. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement