The effect of baking and pulsed laser irradiation on the bulk laser damage threshold of potassium dihydrogen phosphate crystals
The effect of baking and pulsed laser irradiation on the bulk laser damage threshold of potassium dihydrogen phosphate crystals
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DOI：
10.1063/1.93319
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发表时间：
1982-07
影响因子：
4
通讯作者：
J. Swain;S. Stokowski;D. Milam;G. C. Kennedy
中科院分区：
文献类型：
--
作者：
J. Swain;S. Stokowski;D. Milam;G. C. Kennedy
我们将磷酸二氢钾晶体的体激光损伤阈值提高了5倍，首先将晶体在140°C下烘烤24小时，然后用越来越强的激光脉冲照射它们。烘烤和亚阈值激光照射联合使用比单独使用任何一种方法都更有效地提高了体损伤阈值。该组合工艺在1 ~ 20 ns的所有激光脉冲持续时间内都有效。
We increased the bulk laser damage threshold of potassium dihydrogen phosphate crystals by as much as a factor of 5 by first baking the crystals at 140 °C for 24 h and then irradiating them with laser pulses of increasing fluence. The combination of baking and subthreshold laser irradiation was more effective in improving bulk damage thresholds than either process alone. The combined process was effective for all laser pulse durations from 1 to 20 ns.