Visible to Near-Infrared Sensitization of Silicon Substrates via Energy Transfer from Proximal Nanocrystals: Further Insights for Hybrid Photovoltaics
Visible to Near-Infrared Sensitization of Silicon Substrates via Energy Transfer from Proximal Nanocrystals: Further Insights for Hybrid Photovoltaics
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DOI:
10.1021/nn400924y
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发表时间:
2013-04-01
期刊:
影响因子:
17.1
通讯作者:
Malko, Anton V.
中科院分区:
文献类型:
--
作者:
Nimmo, Michael T.;Caillard, Louis M.;Malko, Anton V.
We provide a unified spectroscopic evidence of efficient energy transfer (El) from optically excited colloidal nanoaystal quantum dots (NQDs) into Si substrates in a broad range of wavelengths: from visible (545 nm) to near-infrared (800 nm). Chemical grafting of nanocrystals on hydrogenated Si surfaces is achieved via amine-modified carboxyal alkyl chain linkers, thus ensuring complete surface passivation and accurate NQD positioning. lime-resolved photoluminescence (PL) has been measured for a set of CdSe/ZnS and CdSeTe/ZnS NQDs of various sizes and compositions grafted on Si and SiO2 substrates. The measured acceleration of the PL decays on Si substrates is in good agreement with theoretical expectations based on the frequency-dependent dielechic properties of Si and NQD Si separation distances. A comparative analysis reveals separate contributions to Er coming from the nonradiative (NRET) and radiative (NRET) channels: NRET is a dominant mechanism for proximal NQDs in the middle of the visible range and becomes comparable with RET toward near-infrared wavelengths. The broad range over which the ET efficiency is estimated to be at the level of 9056 further supports the concept that hybrid nanoaystal/ silicon thin-film photovoltaic devices could efficiently harvest solar energy across the entire spectrum of wavelengths.