Rise and fall of Landau's quasiparticles while approaching the Mott transition.
Rise and fall of Landau's quasiparticles while approaching the Mott transition.
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DOI：
10.1038/s41467-021-21741-z
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发表时间：
2021-03-10
影响因子：
16.6
通讯作者：
Fratini S
中科院分区：
文献类型：
--
作者：
Pustogow A;Saito Y;Löhle A;Sanz Alonso M;Kawamoto A;Dobrosavljević V;Dressel M;Fratini S
Landau认为，金属的低温特性可以用长寿命的准粒子来理解，这些准粒子的所有复杂相互作用都包含在费米-液体参数中，比如有效质量。尽管其广泛的适用性，电子输运在坏的或奇怪的金属和非常规超导体是有争议的讨论朝着可能崩溃的准粒子概念。在这里，我们探讨了半填充时相关金属在接近莫特绝缘子时对不同相关强度的电动力学响应。我们揭示了持久的费米液体行为，光学散射率与温度和频率有明显的二次依赖关系，以及令人费解的弹性松弛贡献。电阻率超过Ioffe-Regel-Mott极限时，会出现“位移德鲁德峰”。我们的结果得到了光学响应理论模型的支持，证明了受动态局部化影响并在莫特跃迁附近溶解的弹性准粒子中出现坏金属。强相关电子系统中的电荷输运尚不完全清楚。在这里，作者表明弹性准粒子在有限频率下持续进入莫特绝缘体附近的坏金属区，其中动态局部化导致“位移的德鲁德峰”和强烈增强的直流电阻率。
Landau suggested that the low-temperature properties of metals can be understood in terms of long-lived quasiparticles with all complex interactions included in Fermi-liquid parameters, such as the effective mass m⋆. Despite its wide applicability, electronic transport in bad or strange metals and unconventional superconductors is controversially discussed towards a possible collapse of the quasiparticle concept. Here we explore the electrodynamic response of correlated metals at half filling for varying correlation strength upon approaching a Mott insulator. We reveal persistent Fermi-liquid behavior with pronounced quadratic dependences of the optical scattering rate on temperature and frequency, along with a puzzling elastic contribution to relaxation. The strong increase of the resistivity beyond the Ioffe–Regel–Mott limit is accompanied by a ‘displaced Drude peak’ in the optical conductivity. Our results, supported by a theoretical model for the optical response, demonstrate the emergence of a bad metal from resilient quasiparticles that are subject to dynamical localization and dissolve near the Mott transition. Charge transport in strongly correlated electron systems is not fully understood. Here, the authors show that resilient quasiparticles at finite frequency persist into the bad-metal regime near a Mott insulator, where dynamical localization results in a ‘displaced Drude peak’ and strongly enhanced dc resistivity.
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影响因子：
3.7
作者：
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通讯作者：
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影响因子：
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