Ordering of high-quality InAs quantum dots on defect-free nanoholes - art. no. 072107
Ordering of high-quality InAs quantum dots on defect-free nanoholes - art. no. 072107
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DOI：
10.1063/1.2174097
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发表时间：
2006-02-13
影响因子：
4
通讯作者：
Koguchi, N
中科院分区：
文献类型：
--
作者：
Kim, JS;Kawabe, M;Koguchi, N
结合原子力显微镜（AFM）针尖诱导纳米氧化、原子氢刻蚀/清洗（AHE/C）和液滴外延方法，我们展示了一种制备高质量InAs量子点（QD）阵列的有前途的方法。利用AFM针尖诱导纳米氧化和随后的AHE/C制备了高度对准的无缺陷纳米孔作为成核点。利用在人工图案化的纳米孔上的液滴外延，我们制备了横向排列的InAs量子点，点间距为100 nm。InAs量子点阵列的光致发光显示出在1.22 eV处的强发射，即使处理的界面直接面对InAs量子点的基底，也表明该过程可以减少纳米孔和界面处的物理和化学缺陷/污染物。
We demonstrate a promising way for the fabrication of high-quality InAs quantum dot (QD) arrays by combining atomic force microscope (AFM) tip-induced nano-oxidation, atomic-hydrogen etching/cleaning (AHE/C), and droplet epitaxy method. The highly aligned defect-free nanoholes as nucleation sites were fabricated by using AFM tip-induced nano-oxidation and subsequent AHE/C. Using the droplet epitaxy on the artificially patterned nanoholes, we fabricated laterally arrayed InAs QDs with an interdot distance of 100 nm. The photoluminescence from the InAs QD arrays showed strong emission at 1.22 eV, even though the processed interface directly faced the base of the InAs QDs, indicating that the process can reduce the physical and chemical defects/contaminants at the nanoholes and interface.