Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate
Improved power performance for a recessed-gate AlGaN-GaN heterojunction FET with a field-modulating plate
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DOI：
10.1109/tmtt.2004.837159
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发表时间：
2004-11-01
影响因子：
4.3
通讯作者：
Kuzuhara, M
中科院分区：
文献类型：
--
作者：
Okamoto, Y;Ando, Y;Kuzuhara, M
在 SiC 衬底上成功制备了凹栅 AlGaN-GaN 场调制板 (FP) 场效应晶体管 (FET)。通过在 FP FET 上采用凹栅结构，跨导从 150 mS/mm 增加到 270 mS/mm，从而改善增益特性，并将电流崩塌降至最低。在 2 GHz 时，48 毫米宽的嵌入式 FP FET 表现出创纪录的 230 W (4.8 W/mm) 输出功率，功率附加效率为 67%，线性增益为 9.5 dB，漏极偏置为 53V。
A recessed-gate AlGaN-GaN field-modulating plate (FP) field-effect transistor (FET) was successfully fabricated on an SiC substrate. By employing a recessed-gate structure on an FP FET, the transconductance was increased from 150 to 270 mS/mm, leading to an improvement in gain characteristics, and current collapse was minimized. At 2 GHz, a 48-mm-wide recessed FP FET exhibited a record output power of 230 W (4.8 W/mm) with 67% power-added efficiency and 9.5-dB linear gain with a drain bias of 53V.