Refractive indices of BxAl1−xN (x = 0–0.012) and ByGa1−yN (y = 0–0.023) epitaxial layers in ultraviolet region
Refractive indices of BxAl1−xN (x = 0–0.012) and ByGa1−yN (y = 0–0.023) epitaxial layers in ultraviolet region
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BxAl1−xN (x = 0–0.012) 和 ByGa1−yN (y = 0–0.023) 外延层在紫外区的折射率
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发表时间：
2003
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通讯作者：
H. Kawanishi
中科院分区：
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作者：
Shunsuke Watanabe;T. Takano;Keisuke Jinen;J. Yamamoto;H. Kawanishi
BxAl 1 −xN和ByGa 1 −yN外延层的折射率通过光反射光谱在230 nm至600 nm的紫外（UV）波长范围内确定。（AlN/B0.01Al0.99N）和（GaN/B0.02Ga0.98N）异质结构在250 nm处的相对折射率差分别为17%和11%。这些值表明，使用包括少量硼的氮化物半导体可以在UV至深UV光谱区域中组织光波导。对于（AlN/BxAl 1 −xN）和（GaN/ByGa 1 −yN）异质结构，分别在250 nm和370 nm处仅用0.2%和1.1%的硼就实现了6%的相对折射率差。（© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Refractive indices of BxAl1−xN and ByGa1−yN epitaxial layers were determined in the ultraviolet (UV) wavelength range from 230 nm to 600 nm by the light reflectance spectrum. The relative refractive index differences of (AlN/B0.01Al0.99N) and (GaN/B0.02Ga0.98N) heterostructures were 17% at 250 nm and 11% at 370 nm, respectively. These values indicate that an optical waveguide can be organized in the UV to deep-UV spectral region using the nitride semiconductors which include a small amount of boron. The relative refractive index difference of 6% was achieved with only 0.2% and 1.1% of boron for (AlN/BxAl1−xN) and (GaN/ByGa1−yN) heterostructures at 250 nm and 370 nm, respectively. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)