Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition
Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition
复制标题
U 形沟槽 MOS 电容器中栅极氧化物及其与 Si 界面的电特性：多晶硅掺杂和氧化物成分的影响
DOI：
10.1016/s0038-1101(02)00442-2
复制
发表时间：
2003
影响因子：
1.7
通讯作者：
J. Ruzyllo
中科院分区：
文献类型：
--
作者：
S. Suliman;B. Venkataraman;C. Wu;R. Ridley;G. Dolny;O. Awadelkarim;S. Fonash;J. Ruzyllo
