Low-threshold mesa-etched vertical-cavity InGaAs/GaAs surface-emitting lasers grown by MOCVD
Low-threshold mesa-etched vertical-cavity InGaAs/GaAs surface-emitting lasers grown by MOCVD
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MOCVD 生长的低阈值台面蚀刻垂直腔 InGaAs/GaAs 表面发射激光器
DOI：
10.1049/el:19950431
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
K. Iga
中科院分区：
文献类型：
--
作者：
T. Mukaihara;Y. Hayashi;N. Hatori;N. Ohnoki;A. Matsutani;F. Koyama;K. Iga
本文报道了用MOCVD生长的柱刻蚀结构的InGaAs/GaAs垂直腔面发射激光器，其阈值电流为0.33mA，阈值电流密度为380 A/cm/sup 2/。并对器件的热阻、结温等热特性进行了讨论。从该实验判断，可以预期通过减少非辐射复合和电阻来进一步降低阈值电流。>
The authors have demonstrated a low threshold current of 0.33 mA and a threshold current density of 380 A/cm/sup 2/ for MOCVD-grown InGaAs/GaAs vertical-cavity surface-emitting lasers with a pillar etched structure. The thermal characteristic of the fabricated device including thermal resistance and junction temperature rise is also discussed. Judging from this experiment, further reduction of threshold current can be expected by reducing nonradiative recombination and electrical resistance. >