Rapid isothermal annealing of ion implantation damage using a thermal radiation source
Rapid isothermal annealing of ion implantation damage using a thermal radiation source
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DOI：
10.1063/1.92818
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发表时间：
1981-10
影响因子：
4
通讯作者：
R. T. Fulks;C. Russo;P. R. Hanley;T. Kamins
中科院分区：
文献类型：
--
作者：
R. T. Fulks;C. Russo;P. R. Hanley;T. Kamins
利用石墨加热器的辐射，对硅中的离子注入损伤进行了快速退火。完整的3英寸DIAM晶片在单次10秒的曝光下进行了热处理，其中硼(50keV；1×1015 cm−2)具有高活性，而高剂量砷(140keV；6×1015 cm−2)具有中等活性。硼和砷的掺杂剂再分布分别为∼1000A和∼200A。注入的p+n和n+p二极管的漏电流与炉退火控制晶片相当，在结附近的耗尽区显示出良好的结晶度。晶片上的二极管漏电均匀度也很好。用这种技术对氧化物进行的C-V测量表明，平带电压在0.5V以内，与对照晶片上的测量结果相同。与激光、电子束或高强度弧光灯等更复杂的电源相比，这种退火植入物损伤的方法是一种实用的替代方法。
The rapid annealing of ion implantation damage in silicon using the radiation from a graphite heater has been demonstrated. Complete 3‐in.‐diam wafers were annealed in a single 10‐sec exposure with high activation for implants of boron (50 keV; 1×1015 cm−2) and moderate activation for high‐dose arsenic implants (140 keV; 6×1015 cm−2). Dopant redistribution was ∼1000 A for boron and ∼200 A for arsenic. Leakage currents of implanted p+n and n+p diodes were comparable to those of furnace‐annealed control wafers and indicate good crystallinity in the depletion region near the junction. Diode leakage uniformity across the wafers was also excellent. C‐V measurements on oxides annealed by this technique showed flatband voltages within 0.5 V of those measured on control wafers. This method of annealing implant damage is a practical alternative to those involving more elaborate power sources such as lasers, electron beams, or high‐intensity arc lamps.