Influence of hydrogen on interstitial iron concentration in multicrystalline silicon during annealing steps
Influence of hydrogen on interstitial iron concentration in multicrystalline silicon during annealing steps
复制标题
退火过程中氢对多晶硅中间隙铁浓度的影响
DOI：
10.1063/1.4794852
复制
发表时间：
2013
影响因子：
3.2
通讯作者：
G. Hahn
中科院分区：
文献类型：
--
作者：
Philipp Karzel;A. Frey;S. Fritz;G. Hahn
研究了退火多晶硅片中氢原子的内扩散对间隙铁浓度的影响。具有类似初始[Fei]的相邻晶片在有和没有内扩散H的情况下退火。通过将样品暴露于400 °C的微波诱导的远程氢等离子体来实现内扩散。[Fei]在解离FeB络合物之前和之后基于寿命测量检测到。在室温下通过醌氢酮-甲醇溶液实现表面钝化，以避免在表面钝化期间进一步的温度步骤或H的内扩散。根据在有和没有H的退火步骤之前和之后的[Fei]测量，可以评估单独的H对[Fei]的影响。将结果与先前的实验进行比较，其中相同的SiNx：H层被用作在400 °C下的几次退火之前和之后的mc-Si样品的多次[Fei]测量的表面钝化。可以证明，H等离子体气氛具有...
The influence of in-diffusing atomic H into an annealed multicrystalline silicon (mc-Si) wafer on the concentration of interstitial iron [Fei] was investigated. Neighboring wafers with similar initial [Fei] were annealed with and without in-diffusing H. In-diffusion was realized by exposing the samples to a microwave induced remote hydrogen plasma at 400 °C. [Fei] was detected based on lifetime measurements before and after dissociating the FeB complex. Surface passivation was achieved by a quinhydrone-methanol solution at room temperature to avoid further temperature steps or in-diffusion of H during surface passivation. From [Fei] measurements before and after the annealing steps with and without H, the influence of H alone on [Fei] could be accessed. The results were compared to previous experiments where the same SiNx:H layers were used as surface passivation for multiple [Fei] measurements of mc-Si samples before and after several anneals at 400 °C. It could be shown that a H plasma atmosphere has a ...