Design of S-Band Source-Controlled MMIC Voltage Variable Attenuator
Design of S-Band Source-Controlled MMIC Voltage Variable Attenuator
复制标题
S波段源控MMIC电压可变衰减器设计
DOI：
10.1109/punecon52575.2021.9686547
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
B. Pradhan
中科院分区：
文献类型：
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作者：
Subham Banerjee;B. Pradhan
本文介绍了在AWR设计环境13中采用赝晶高电子迁移率晶体管（pHEMT）设计和仿真S波段（2- 4GHz）电压可变衰减器（VVA）的方法。该衰减器可用于自动增益控制电路和校准用途。在2 GHz频率下，最小衰减（控制电压为3.95 V）为2.71195，而最大衰减（控制电压为−4 V）为23.248。S11和S22优于−7 dB。在除最小衰减外的所有控制电压值下，噪声系数均小于等于衰减值。文中还介绍了该电路的工作原理。
The design and simulation of S-Band (2-4 GHz) Voltage Variable Attenuator (VVA) using pseudomorphic High Electron Mobility Transistor (pHEMT) in AWR design environment 13 is presented in this paper. This attenuator can be used in Automatic Gain Control circuits and in calibration purposes. At frequency of 2 GHz, minimum attenuation (at control voltage of 3.95 V) is 2.71195 whereas maximum attenuation (at control voltage of −4 V) is 23.248. S11 and S22 are better than −7 dB. At all control voltage values except at minimum attenuation, the noise figure is less than and equal to the attenuation value. The operating principle of the circuit is also explained in the paper.