Defect density and recombination lifetime in microcrystalline silicon absorbers of highly efficient thin-film solar cells determined by numerical device simulations
Defect density and recombination lifetime in microcrystalline silicon absorbers of highly efficient thin-film solar cells determined by numerical device simulations
复制标题
通过数值器件模拟确定高效薄膜太阳能电池微晶硅吸收体的缺陷密度和复合寿命
DOI：
10.1063/1.1577813
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发表时间：
2003
影响因子：
3.2
通讯作者：
H. Stiebig
中科院分区：
文献类型：
--
作者：
T. Brammer;H. Stiebig
采用等离子体增强化学气相沉积（PECVD）技术，在200 °C下制备了p-i-n结构的微晶硅薄膜太阳电池吸收层，并对其缺陷密度和复合寿命进行了表征。 表征是基于实验确定的太阳能电池特性与数值器件模拟结果的比较。暗反向饱和电流的评估表明，在沉积过程中的氢稀释的复合寿命τ的强烈依赖性。在接近非晶生长的过渡区域（其中观察到最高的太阳能电池效率），τ在结晶沉积范围内最大并且等于约80 ns。吸收层内的空间变化的缺陷密度的方面也解决了通过数值模拟。暗电流的分析结果进行了比较与电子自旋共振数据确定的单层，这使得可以得出结论方面…
The absorber layers of microcrystalline silicon thin-film solar cells with p-i-n structure deposited by plasma-enhanced chemical vapor deposition at 200 °C are characterized regarding the defect density and the recombination lifetime. The characterization is based on a comparison of experimentally determined solar cell characteristics with results from numerical device simulations. Evaluation of the dark reverse saturation current indicates a strong dependence of the recombination lifetime τ on the hydrogen dilution during the deposition. Close to the transition region to amorphous growth, where the highest solar cell efficiencies are observed, τ is maximum within the crystalline deposition regime and equals around 80 ns. The aspect of a spatially varying defect density within the absorber layer is also addressed by numerical simulations. The results from the analysis of the dark current are compared with electron spin resonance data determined on single layers, which allows conclusions to be drawn regard...