High-isolation lateral RF MEMS capacitive switch based on HfO2 dielectric for high frequency applications
High-isolation lateral RF MEMS capacitive switch based on HfO2 dielectric for high frequency applications
复制标题
基于 HfO2 电介质的高隔离横向 RF MEMS 电容开关，适用于高频应用
DOI：
10.1016/j.sna.2012.03.013
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发表时间：
2012-12-01
影响因子：
4.6
通讯作者：
Li, Z. H.
中科院分区：
文献类型：
--
作者：
He, X. J.;Lv, Z. Q.;Li, Z. H.
在本文中，我们已经开发了一种电热驱动的RF MEMS电容开关，其中的HfO2薄膜，原子层沉积（ALD）工艺沉积，用作信号线和地线之间的绝缘介质。由于HfO2膜的高介电常数和优异的电和热绝缘性能，以及高驱动力的MEMS致动器，建议的开关的隔离与HfO2膜涂覆在35 GHz的隔离高达60 dB，隔离优于25 dB的带宽为10.5 GHz。结果表明，HfO2薄膜是一种很好的候选材料作为侧壁介质，以实现具有高RF性能的横向电容开关。(C)2012 Elsevier B.V.保留所有权利。
In this paper, we have developed an electrothermally driven RF MEMS capacitive switch, where the HfO2 film, deposited by atomic layer deposition (ALD) process, was used as insulation dielectric between signal line and ground line. Thanks to high permittivity and excellent electrical and thermal isolation properties of the HfO2 film, as well as high driving force of the electrothermal actuator, the isolation of the proposed switch coated with the HfO2 film was up to 60 dB at 35 GHz and the bandwidth of isolation better than 25 dB was 10.5 GHz. The results demonstrate that the HfO2 film is a good candidate material serving as sidewall dielectric to realize the lateral capacitive switch with high RF performances. (C) 2012 Elsevier B.V. All rights reserved.