Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes
Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes
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DOI：
10.1063/1.3601861
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发表时间：
2011-06
影响因子：
4
通讯作者：
C. Yerino;Yu Zhang;B. Leung;M. Lee;T. Hsu;Chunyan Wang;W. Peng;Jung Han
中科院分区：
文献类型：
--
作者：
C. Yerino;Yu Zhang;B. Leung;M. Lee;T. Hsu;Chunyan Wang;W. Peng;Jung Han
氮化镓被认为是一种化学惰性的陶瓷类半导体，在室温下没有有效的蚀刻剂。在这封信中，我们研究了通过电化学过程制备的纳米多孔 GaN 的形状转变。研究发现，在典型的生长温度下，曲率驱动的质量传输过程可以有效地将纳米级和微米级的 GaN 塑造成有用的结构，例如埋入腔或空气半导体结构。这种“微加工”GaN 工艺增加了外延和器件设计的灵活性。据报道，宽度延伸数毫米的单晶 GaN 纳米膜作为概念验证演示。
Gallium nitride is considered a chemically inert, ceramic-like semiconductor with no effective etchants available at room temperature. In this letter, we study the shape transformation of nanoporous GaN prepared by an electrochemical process. It is found that the curvature-driven mass transport process at typical growth temperatures is effective in shaping GaN on both the nanoscale and microscale into useful configurations such as buried cavities or semiconductor-on-air structures. This process of “micromachining” GaN adds flexibilities to epitaxy and device designs. A monocrystalline GaN nanomembrane, extending millimeters in width, is reported as a proof-of-concept demonstration.