Size-dependent strain in epitaxial (001) gadolinium-doped ceria nanoislands
Size-dependent strain in epitaxial (001) gadolinium-doped ceria nanoislands
复制标题
外延 (001) 掺钆二氧化铈纳米岛中的尺寸依赖性应变
DOI：
10.1063/1.3527079
复制
发表时间：
2010
影响因子：
4
通讯作者：
X. Obradors
中科院分区：
文献类型：
--
作者：
V. Solovyov;M. Gibert;T. Puig;X. Obradors
我们报道了外延Gd掺杂CeO_2纳米岛的尺寸相关应变，这是由同步辐射x射线衍射法测定的。对称的(004)和不对称的(224)反射的倒易空间截面由假设岛屿的大小依赖的应变的模型来近似，该模型使用原子力显微镜获得的真实空间的大小分布。我们发现，小于40 nm的岛屿承受着高水平的横向拉伸应变和正常压缩。由倒易图分析确定的横向与法向应变比表明，横向拉伸是主要的应力产生因素，可能是由于岛-衬底界面上的氧空位有序化所致。
We report size-dependent strain in epitaxial gadolinium doped ceria nanoislands, which was determined by synchrotron x-ray diffraction. Reciprocal space sections of symmetric, (004) and asymmetric, (224) reflections are approximated by a model assuming size-dependent strain of the islands using real-space size distribution obtained by atomic force microscopy. We show that the islands smaller than 40 nm are subjected to a high level of lateral tensile strain and normal compression. The lateral to normal strain ratio determined from the reciprocal map analysis suggests that lateral tension is the primary stress generator, possibly due to oxygen vacancy ordering on the island-substrate interface.