Engineering the magnetic anisotropy axes in epitaxial half-Heusler NiMnSb by Pt and Ta capping
Engineering the magnetic anisotropy axes in epitaxial half-Heusler NiMnSb by Pt and Ta capping
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DOI：
10.1063/1.5001385
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发表时间：
2017-10
影响因子：
4
通讯作者：
F. Gerhard;M. Baussenwein;L. Scheffler;J. Kleinlein;C. Gould;L. Molenkamp
中科院分区：
文献类型：
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作者：
F. Gerhard;M. Baussenwein;L. Scheffler;J. Kleinlein;C. Gould;L. Molenkamp
已发现NiMnSb中的磁各向异性对层参数（例如Mn浓度或厚度）高度敏感。在这里，我们报告薄外延单晶质量NiMnSb薄膜（3-40 nm）的磁各向异性结合不同的覆盖层材料，Ru，Pt和Ta。我们观察到，磁各向异性的易磁化轴被迫进入[11 <$0]晶体方向的Pt覆盖和进入[110]晶体方向的Ta覆盖的NiMnSb，与NiMnSb膜的原始各向异性无关。这种效果是独立的覆盖层的厚度，甚至存在于多层与铜中间层（几纳米）之间的NiMnSb和Pt帽，这表明它是不相关的界面化学，并可能指向它起源于强大的自旋轨道耦合的覆盖层。
The magnetic anisotropy in NiMnSb has been found to be highly sensitive to layer parameters, such as Mn concentration or thickness. Here, we report on the magnetic anisotropy of thin epitaxial single crystal quality NiMnSb films (3–40 nm) in combination with different capping layer materials, Ru, Pt, and Ta. We observe that the easy axis of the magnetic anisotropy is forced into the [11¯0] crystal direction for Pt capped and into the [110] crystal direction for Ta capped NiMnSb, irrespective of the original anisotropy of the NiMnSb film. This effect is independent of the thickness of the capping layer and even present in multilayers with a Cu interlayer (few nanometers) between the NiMnSb and Pt cap, indicating that it is not related to interface chemistry and possibly pointing to it originating from the strong spin-orbit coupling in the capping layers.