Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate
Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate
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DOI：
10.1063/1.1606501
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发表时间：
2003-08
影响因子：
4
通讯作者：
Y. Qiu;D. Uhl;R. Chacon;Rui Q. Yang
中科院分区：
文献类型：
--
作者：
Y. Qiu;D. Uhl;R. Chacon;Rui Q. Yang
采用金属有机物气相外延技术生长了以InP（001）为衬底的单叠层InAs自组装量子点激光器。窄脊波导激光器连续工作时的激光输出温度可达260 K，脉冲工作时的激光输出温度接近室温，发射波长在1.59 ~ 1.74 μm之间。在200 K以上，观察到0.09 nm/K的非常低的波长温度灵敏度。不同温度下的激光谱表明，由于InAs量子点的尺寸较大且展宽不均匀，基态和激发态几乎重叠，形成准连续带。这些结果将为进一步开发基于InP衬底的长波长InAs量子点激光器提供指导。
Single-stack InAs self-assembled quantum-dot (QD) lasers based on (001) InP substrates have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous-wave operation, and near room temperature in pulsed mode, with emission wavelengths between 1.59 to 1.74 μm. Above 200 K, a very low wavelength temperature sensitivity of 0.09 nm/K was observed. Lasing spectra at different temperatures suggests that the ground states and the excited states almost overlap, and form a quasicontinuous band due to the large size of the InAs dots and their inhomogeneous broadening. These results will provide guidance for further development of long wavelength InAs QD lasers based on InP substrates.