Increased Curie temperature and enhanced perpendicular magneto anisotropy of Cr2Ge2Te6/NiO heterostructures
Increased Curie temperature and enhanced perpendicular magneto anisotropy of Cr2Ge2Te6/NiO heterostructures
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DOI：
10.1063/1.5130930
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发表时间：
2019-12-02
影响因子：
4
通讯作者：
Chen, Y. P.
中科院分区：
文献类型：
--
作者：
Idzuchi, H.;Allcca, A. E. Llacsahuanga;Chen, Y. P.
二维货车德瓦耳斯材料的磁性是近年来研究的热点。然而，这些材料的居里温度迄今为止仍然相对较低。本文测量了货车德瓦耳斯铁磁体Cr_2Ge_2 Te_6及其与反铁磁绝缘体NiO的异质结构在垂直磁场下的磁光克尔效应。我们观察到一个显着的增加，居里温度和磁垂直各向异性Cr2 Ge 2 Te 6/NiO异质结构相比，在Cr2 Ge 2 Te 6。对同样剥离的Cr_2Ge_2Te_6薄片（SiO_2/Si衬底上）在沉积NiO前后的测量表明，Cr_2Ge_2Te_6/NiO的磁滞回线可以变为方形，并具有较大的矫顽场。对于Cr2 Ge 2 Te 6/NiO观察到的最大居里温度（T-C）达到类似于120 K，这几乎是对于单独的Cr2 Ge 2 Te 6报道的类似于60 K的最大T-C的两倍。增强的垂直各向异性和增加的居里温度被观察到的Cr2 Ge 2 Te 6薄片与各种厚度范围从类似于5 nm到类似于200 nm。结果表明，二维货车德瓦耳斯磁体的磁性能可以通过与其他材料的异质结构界面来设计和控制。由AIP Publishing授权出版。
Magnetism in two-dimensional van der Waals materials has received significant attention recently. The Curie temperature reported for these materials, however, has so far remained relatively low. Here, we measure magneto-optical Kerr effects under a perpendicular magnetic field for van der Waals ferromagnet Cr2Ge2Te6 and its heterostructures with antiferromagnetic insulator NiO. We observe a notable increase in both Curie temperature and magnetic perpendicular anisotropy in Cr2Ge2Te6/NiO heterostructures compared to those in Cr2Ge2Te6. Measurements on the same exfoliated Cr2Ge2Te6 flake (on a SiO2/Si substrate) before and after depositing NiO show that the hysteresis loop can change into a square shape with a larger coercive field for Cr2Ge2Te6/NiO. The maximum Curie temperature (T-C) observed for Cr2Ge2Te6/NiO reaches similar to 120 K, which is nearly twice the maximum T-C similar to 60 K reported for Cr2Ge2Te6 alone. Both enhanced perpendicular anisotropy and increased Curie temperature are observed for Cr2Ge2Te6 flakes with a variety of thicknesses ranging from similar to 5 nm to similar to 200 nm. The results indicate that magnetic properties of two-dimensional van der Waals magnets can be engineered and controlled by using the heterostructure interface with other materials. Published under license by AIP Publishing.