Efficiency of SOI-like structures for reducing the thermal resistance in thin-film SOI power LDMOSFETs
Efficiency of SOI-like structures for reducing the thermal resistance in thin-film SOI power LDMOSFETs
复制标题
类 SOI 结构可有效降低薄膜 SOI 功率 LDMOSFET 的热阻
DOI：
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发表时间：
2004
影响因子：
4.9
通讯作者：
J. Millán
中科院分区：
文献类型：
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作者：
J. Roig;J. Urresti;I. Cortés;D. Flores;S. Hidalgo;J. Millán
在薄膜SOI功率横向双扩散MOS场效应管中，采用类绝缘体硅(SOI)结构来消除有源硅层中的热量是最近的报道。本文提供了它们的有效性的实验演示。为此，一种分别基于多晶硅和铂电阻条的加热器-传感器系统已经集成在与正在研究的有源硅层的热接触中。根据最新技术，在不同SOI层厚度和热源长度的情况下，对SOI多层衬底和通过埋氧化接触技术引起的热阻降低进行了稳态分析。此外，实验结果也得到了加热器-传感器系统的数值模拟结果的支持。
Silicon-on-insulator (SOI)-like structures to remove the heat from the active silicon layer in thin-film SOI power lateral double diffused MOS field-effect transistors have been recently reported. This paper provides an experimental demonstration of their efficiency. For this purpose, a heater-sensor system based on poly-Si and platinum resistor stripes, respectively, has been integrated in thermal contact with the active silicon layer under study. The thermal resistance reduction due to the contact-through-buried-oxide technique and the SOI-multilayer substrates have been analyzed at steady state using different SOI layer thicknesses and heat source lengths, in accordance with the state-of-the-art. In addition, experimental results are supported by those extracted from numerical simulation of the heater-sensor system.