Energy-Level Alignment of a Hole-Transport Organic Layer and ITO: Toward Applications for Organic Electronic Devices
Energy-Level Alignment of a Hole-Transport Organic Layer and ITO: Toward Applications for Organic Electronic Devices
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DOI：
10.1021/acsami.7b06691
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发表时间：
2017-09-13
影响因子：
9.5
通讯作者：
Rochet, Francois
中科院分区：
文献类型：
--
作者：
Arnoux, Quentin;Boucly, Anthony;Rochet, Francois
采用真空沉积法在氧化铟锡（ITO）衬底上生长了2，2 ′，6，6 ′-四苯基-4，4 ′-二亚吡喃基（DIPO-Ph-4）。通过原子力显微镜以及同步辐射UV和X射线光电子能谱对薄膜进行了表征，以深入了解材料生长并更好地了解ITO/DIPO-Ph-4界面的电子特性。为了解释我们的光谱数据，我们考虑在ITO界面处由于从有机层到基板的电荷转移而形成阳离子DIPO-Ph-4。中性和阳离子物种的电离能DFT计算证实了这一假设。最后，我们提出的ITO/DIPO-Ph-4系统的能量图，我们讨论了该接口在各种技术相关的系统中的应用，作为OLED中的空穴注入器或作为邻近于原型OPV层P3 HT：PCBM的空穴-集电极界面层。
2,2',6,6'-Tetrapheny1-4,4'-dipyranylidene (DIPO-Ph-4) was grown by vacuum deposition on an indium tin oxide (ITO) substrate. The films were characterized by atomic force microscopy as well as synchrotron radiation UV and X-ray photoelectron spectroscopy to gain an insight into the material growth and to better understand the electronic properties of the ITO/DIPO-Ph-4 interface. To interpret our spectroscopic data, we consider the formation of cationic DIPO-Ph-4 at the ITO interface owing to a charge transfer from the organic layer to the substrate. Ionization energy DFT calculations of the neutral and cationic species substantiate this hypothesis. Finally, we present the energetic diagram of the ITO/DIPO-Ph-4 system, and we discuss the application of this interface in various technologically relevant systems, as a hole-injector in OLEDs or as a hole-collector interfacial layer adjacent to the prototypical OPV layer P3HT:PCBM.