Raman lasing and soliton mode-locking in lithium niobate microresonators
Raman lasing and soliton mode-locking in lithium niobate microresonators
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DOI：
10.1038/s41377-020-0246-7
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发表时间：
2019-08
期刊：
影响因子：
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通讯作者：
Mengjie Yu;Yoshitomo Okawachi;Rebecca Cheng;Cheng Wang;Mian Zhang;A. Gaeta;M. Lončar
中科院分区：
文献类型：
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作者：
Mengjie Yu;Yoshitomo Okawachi;Rebecca Cheng;Cheng Wang;Mian Zhang;A. Gaeta;M. Lončar
绝缘体上锂氧化物（LNOI）技术的最新进展为光电子学开辟了新的机遇，因为由于结构中的高光学限制，可以实现性能更好，功耗更低和占地面积更小的设备。LNOI平台提供了大的χ（2）和χ（3）非线性度沿着色散工程的能力，为下一代集成光子电路提供了全新的非线性光子器件和应用。然而，拉曼散射及其与其他非线性过程的相互作用尚未在色散工程LNOI纳米器件中得到广泛研究。在这项工作中，我们通过选择性激发拉曼激活声子模，在单片Li_2O_3（LN）微谐振器中获得了拉曼辐射谱。当连续波泵浦阈值功率为20 mW时，在反向方向观察到拉曼振荡的主模，差分量子效率为46%.我们探讨了拉曼散射对克尔光频梳产生的影响。我们通过控制腔的几何形状来充分抑制拉曼效应，从而在X切LNOI芯片中实现锁模。我们对拉曼效应的分析为未来基于LNOI平台的芯片光子器件的开发提供了指导。
The recent advancement in lithium-niobite-on-insulator (LNOI) technology is opening up new opportunities in optoelectronics, as devices with better performance, lower power consumption and a smaller footprint can be realised due to the high optical confinement in the structures. The LNOI platform offers both largeχ(2)andχ(3)nonlinearities along with the power of dispersion engineering, enabling brand new nonlinear photonic devices and applications for the next generation of integrated photonic circuits. However, Raman scattering and its interaction with other nonlinear processes have not been extensively studied in dispersion-engineered LNOI nanodevices. In this work, we characterise the Raman radiation spectra in a monolithic lithium niobate (LN) microresonator via selective excitation of Raman-active phonon modes. The dominant mode for the Raman oscillation is observed in the backward direction for a continuous-wave pump threshold power of 20 mW with a high differential quantum efficiency of 46%. We explore the effects of Raman scattering on Kerr optical frequency comb generation. We achieve mode-locked states in an X-cut LNOI chip through sufficient suppression of the Raman effect via cavity geometry control. Our analysis of the Raman effect provides guidance for the development of future chip-based photonic devices on the LNOI platform.