Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap
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DOI：
10.1063/1.3509416
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发表时间：
2010-11-08
影响因子：
4
通讯作者：
Doolittle, W. Alan
中科院分区：
文献类型：
--
作者：
Moseley, Michael;Lowder, Jonathan;Doolittle, W. Alan
结合瞬变反射高能电子衍射强度研究了金属调制外延生长的InGaN合金的表面动力学。提出了一种现场监测和控制铟偏析的方法。研究发现，铟的偏析与过剩吸附金属的数量有关，而不是总体上与富金属生长状态有关。开发了一种改进的MME形式，其中通过遮挡生长来管理多余的金属剂量，并在整个混溶间隙中生长出高质量的InGaN薄膜。(C)2010年美国物理研究所。[DOI：10.1063/1.3509416]
The surface kinetics of InGaN alloys grown via metal-modulated epitaxy (MME) are explored in combination with transient reflection high-energy electron diffraction intensities. A method for monitoring and controlling indium segregation in situ is demonstrated. It is found that indium segregation is more accurately associated with the quantity of excess adsorbed metal, rather than the metal-rich growth regime in general. A modified form of MME is developed in which the excess metal dose is managed via shuttered growth, and high-quality InGaN films throughout the miscibility gap are grown. (C) 2010 American Institute of Physics. [doi:10.1063/1.3509416]