Investigation of Transient Reverse Currents in X-Ray Detector Pin Diodes by Discharge Current Transient Spectroscopy
Investigation of Transient Reverse Currents in X-Ray Detector Pin Diodes by Discharge Current Transient Spectroscopy
复制标题
通过放电电流瞬态光谱研究 X 射线探测器 Pin 二极管中的瞬态反向电流
DOI：
10.1143/jjap.39.178
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发表时间：
2000
影响因子：
1.5
通讯作者：
Kazushige Segawa
中科院分区：
文献类型：
--
作者：
Hideharu Matsuura;Kazushige Segawa
当从0v突然施加高反向偏置（工作电压）时，x射线探测器二极管中会产生瞬态反向电流，从而导致x射线测量中的问题。放电电流瞬态光谱（DCTS）用于测定二极管中瞬态反向电流相关陷阱的密度、能级和捕获截面。DCTS分析显示，在我们的硅引脚二极管中存在一种EC-0.54 eV的陷阱，其中EC是导带底部的能级。
Transient reverse currents flow in X-ray detector diodes when a high reverse bias (operating voltage) is suddenly applied from 0 V, which leads to problems in the X-ray measurements. Discharge current transient spectroscopy (DCTS) was applied to determine the densities, energy levels and capture cross sections of traps related to the transient reverse currents in the diodes. DCTS analysis revealed one type of trap with EC-0.54 eV in our silicon pin diodes, where EC is the energy level at the bottom of the conduction band.