Ion chemistry in silane dc discharges
Ion chemistry in silane dc discharges
复制标题
硅烷直流放电中的离子化学
DOI：
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发表时间：
1985
期刊：
影响因子：
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通讯作者：
A. Gallagher
中科院分区：
文献类型：
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作者：
H. Chatham;A. Gallagher
计算了直流硅烷放电中的离子产生和反应。注意，对于典型的低压硅沉积放电，几乎所有的离子产生和反应都发生在阴极鞘层区域中，因此计算考虑了鞘层区域中的离子产生、漂移和反应。鞘模型，惰性气体放电，利用本地和非本地的电子能量分布进行比较，并适应硅烷条件。到达阴极的离子种类（SilH+m）的分布计算的范围内的放电压力和电流，比较质谱仪测量。然而，由于未考虑抽样偏倚问题，我们未对报告的观察结果进行定量比较。
The ion production and reactions in dc silane discharges are calculated. It is noted that almost all ion production and reaction occur in the cathode sheath region for typical low‐pressure silicon‐deposition discharges, so that the calculation considers ion production, drift, and reactions in the sheath region. Sheath models, for inert gas discharges, that utilize local and nonlocal electron energy distributions are compared, and one is adapted to silane conditions. The distribution of ion species (SilH+m) arriving at the cathode is calculated for a range of discharge pressures and currents, for comparison to mass spectrometer measurements. However, we do not make quantitative comparisons to reported observations due to sampling‐bias issues that have not been taken into account.