Interface optimization of ZnO nanorod/CdS quantum dots heterostructure by a facile two-step low-temperature thermal treatment for improved photoelectrochemical water splitting
Interface optimization of ZnO nanorod/CdS quantum dots heterostructure by a facile two-step low-temperature thermal treatment for improved photoelectrochemical water splitting
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通过简单的两步低温热处理优化 ZnO 纳米棒/CdS 量子点异质结构的界面,以改善光电化学水分解
DOI:
10.1016/j.cej.2017.05.021
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发表时间:
2017-10
影响因子:
15.1
通讯作者:
Lin Shiwei
中科院分区:
文献类型:
--
作者:
Nie Qun;Yang Liang;Cao Chang;Zeng Yamei;Wang Guizhen;Wang Caizhuang;Lin Shiwei
A simple and efficient low-temperature thermal treatment process has been demonstrated to dramatically improve the photoelectrochemical (PEC) performance of ZnO nanorod/CdS quantum dots heterostructure. The ZnO/CdS heterojunction was sequentially fabricated by atomic layer deposition, hydrothermal method and successive ionic layer adsorption-reaction method. In contrast to the traditional annealing usually conducted in muffle furnace at high temperature, a two-step low-temperature thermal treatment has been first carried out just on a hot plate at 150 °C for 10 min and then 250 °C for another 10 min, which significantly enhanced the PEC performance of the ZnO/CdS photoanodes. The optimal photocurrent density and the corresponding photoconversion efficiency can reach 9.16 mA cm−2(0.4 VSCE) and 4.03% under a standard simulated illumination condition (AM 1.5 G, 100 mW cm−2), which improved 75% and 44% as much as those of the unheated sample. The incident photon-to-current efficiency (IPCE) is raised up to 95% at 350 nm. These are one of the best results ever reported on the similar ZnO/CdS photoanodes. Systematic PEC experiments attribute the enhancement to the optimized interface between ZnO and CdS by the thermal treatment which can promote charge carrier separation and transportation. Further theoretical calculation confirms the importance of the interface modification on improving the photoelectric properties. The two-step low-temperature thermal treatment thus presents a facile method for the design and optimization of high-performance PEC photoelectrodes.
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影响因子:
3.5
作者:
Wang, Dejun;Jiang, Tengfei;Pang, Shan;Zhang, Yu;Wei, Xiao;Wang, Xi;Xie, Tengfeng
通讯作者:
Xie, Tengfeng
影响因子:
5.5
作者:
Huang, Zongyu;Han, Weijia;Zhang, Han
通讯作者:
Zhang, Han
影响因子:
6.7
作者:
Min Zeng;Xi Zeng;Xiange Peng;Zhuo Zhu;J. Liao;Kai Liu;Guizhen Wang;Shiwei Lin
通讯作者:
Min Zeng;Xi Zeng;Xiange Peng;Zhuo Zhu;J. Liao;Kai Liu;Guizhen Wang;Shiwei Lin
影响因子:
9.5
作者:
Wu, Mi;Chen, Wei-Jian;Li, Shi-Kuo
通讯作者:
Li, Shi-Kuo
影响因子:
3.7
作者:
Kresse, G;Furthmuller, J
通讯作者:
Furthmuller, J