Interface optimization of ZnO nanorod/CdS quantum dots heterostructure by a facile two-step low-temperature thermal treatment for improved photoelectrochemical water splitting

Interface optimization of ZnO nanorod/CdS quantum dots heterostructure by a facile two-step low-temperature thermal treatment for improved photoelectrochemical water splitting
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通过简单的两步低温热处理优化 ZnO 纳米棒/CdS 量子点异质结构的界面,以改善光电化学水分解

DOI:
10.1016/j.cej.2017.05.021
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发表时间:
2017-10
影响因子:
15.1
通讯作者:
Lin Shiwei
Lin Shiwei
中科院分区:
工程技术1区
文献类型:
--
作者:
Nie Qun;Yang Liang;Cao Chang;Zeng Yamei;Wang Guizhen;Wang Caizhuang;Lin Shiwei

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采用一种简单有效的低温热处理工艺,可以显著提高ZnO纳米棒/CdS量子点异质结构的光电化学性能。采用原子层沉积法、水热法和连续离子层吸附反应法制备了ZnO/CdS异质结。与传统的高温退火工艺不同,采用两步低温热处理工艺,即先在150 °C下热处理10 min,再在250 °C下热处理10 min,显著提高了ZnO/CdS光阳极的光电转换性能。在标准模拟光照条件(AM 1.5 G,100 mW cm−2)下,最佳光电流密度和相应的光转换效率分别达到9.16 mA cm−2(0.4 VSCE)和4.03%,比未加热样品提高了75%和44%。在350 nm处入射光子电流效率(IPCE)提高到95%。这是同类ZnO/CdS光阳极的最佳结果之一。系统的光电转换实验结果表明,热处理优化了ZnO和CdS之间的界面,促进了载流子的分离和输运。进一步的理论计算证实了界面改性对提高光电性能的重要性。因此,两步低温热处理为高性能PEC光电极的设计和优化提供了一种简便的方法。
A simple and efficient low-temperature thermal treatment process has been demonstrated to dramatically improve the photoelectrochemical (PEC) performance of ZnO nanorod/CdS quantum dots heterostructure. The ZnO/CdS heterojunction was sequentially fabricated by atomic layer deposition, hydrothermal method and successive ionic layer adsorption-reaction method. In contrast to the traditional annealing usually conducted in muffle furnace at high temperature, a two-step low-temperature thermal treatment has been first carried out just on a hot plate at 150 °C for 10 min and then 250 °C for another 10 min, which significantly enhanced the PEC performance of the ZnO/CdS photoanodes. The optimal photocurrent density and the corresponding photoconversion efficiency can reach 9.16 mA cm−2(0.4 VSCE) and 4.03% under a standard simulated illumination condition (AM 1.5 G, 100 mW cm−2), which improved 75% and 44% as much as those of the unheated sample. The incident photon-to-current efficiency (IPCE) is raised up to 95% at 350 nm. These are one of the best results ever reported on the similar ZnO/CdS photoanodes. Systematic PEC experiments attribute the enhancement to the optimized interface between ZnO and CdS by the thermal treatment which can promote charge carrier separation and transportation. Further theoretical calculation confirms the importance of the interface modification on improving the photoelectric properties. The two-step low-temperature thermal treatment thus presents a facile method for the design and optimization of high-performance PEC photoelectrodes.
ZnO纳米线阵列/CdS量子点异质薄膜的表面光电压表征及其在光伏器件中的应用
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DOI: 10.1103/physrevb.54.11169
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