Cr3+-doped broadband near infrared diopside phosphor for NIR pc-LED
Cr3+-doped broadband near infrared diopside phosphor for NIR pc-LED
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用于 NIR pc-LED 的 Cr3 掺杂宽带近红外透辉石荧光粉
DOI：
10.1016/j.materresbull.2021.111725
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发表时间：
2022-01
影响因子：
5.4
通讯作者：
Jiahua Zhang
中科院分区：
文献类型：
--
作者：
Limin Fang;Zhendong Hao;Liangliang Zhang;Hao Wu;Huajun Wu;Guohui Pan;Jiahua Zhang
宽带近红外荧光粉作为一种新型的近红外光谱测量光源，在pc-LED中有着广泛的应用前景。采用高温固相反应法制备了CaMgSi 2 O 6：xCr 3+透辉石荧光粉。当x从0.25%增加到6%时，Cr ~（3+）的发射带从772 nm红移到822 nm，然后从132 nm展宽到197 nm。高的热稳定性，淬火温度高达355 °C的1%和236 °C的4%Cr3+浓度观察。在100 mA驱动电流下，150 nm和187 nm的近红外激光输出功率分别达到42.04 mW和23.73 mW。我们的研究结果表明，CaMgSi 2 O 6：Cr 3+荧光粉在宽带近红外pc-LED应用中具有很大的应用潜力。
Broadband Near-infrared phosphors have attracted great attention for its potential applications in pc-LED as a novel light source for substance measurements based on NIR spectroscopy. Here, CaMgSi2O6:xCr3+diopside phosphor were prepared by high temperature solid-state reaction. The Cr3+emission band undergoes a red-shift from 772 nm to 822 nm followed with band broadening from 132 nm to 197 nm with the increase ofxfrom 0.25% to 6%. Highly thermal stability with the quenching temperature as high as 355 °C for 1% and 236 °C for 4% Cr3+concentrations are observed. NIR pc-LEDs were fabricated and high NIR output power of 42.04 mW for the bandwidth of 150 nm and 23.73 mW for a more broaden bandwidth of 187 nm are achieved at 100 mA drive current, respectively. Our results suggest that CaMgSi2O6:Cr3+phosphors have great potential for applications in broadband NIR pc-LED applications.
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通讯作者：
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影响因子：
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