Effect of compressive stress on silicon bipolar devices
Effect of compressive stress on silicon bipolar devices
复制标题
压应力对硅双极器件的影响
DOI：
10.1063/1.1661893
复制
发表时间：
1973
影响因子：
3.2
通讯作者：
Y. Kanda
中科院分区：
文献类型：
--
作者：
Y. Kanda
对<100>和<111>晶向的硅二极管电流压应力依赖关系的计算进行了改进。在长谷川理论的基础上，考虑了空穴带的态密度有效质量与应力的关系。在∼为109dyn/cm~2的应力下，由于重空穴有效质量的应力依赖性，预测了一个反常峰值。对于<111>取向，在∼108dyn/cm~2的应力下出现一个小的最小值。共发射极晶体管电流增益β的应力依赖关系可以用与上述计算有关的发射极效率的应力依赖关系和基区传输因子的应力依赖关系的综合效应来解释。也可以解释n-p-n和p-n-p晶体管的β应力依赖性的差异。据预测，β在∼109dyn/cm~2的应力下经历了最小值。对大规模集成电路中晶体管的热应力提出了建议。
The calculation for the compressive stress dependence of silicon diode current is refined for the 〈100〉 and 〈111〉 crystal orientations. The stress dependence of the density‐of‐states effective masses of hole bands is taken into account on the basis of Hasegawa's theory. An anomalous peak is predicted at a stress of ∼ 109 dyn/cm2 due to the stress dependence of the heavy hole effective masses. For the 〈111〉 orientation, a small minimum appears at a stress of ∼ 108 dyn/cm2. The stress dependence of the common‐emitter transistor current gain β can be explained by the combined effects of the stress dependence of the emitter efficiency related to the above‐mentioned calculation and the stress dependence of the base transport factor. The difference of stress dependence of β between n‐p‐n and p‐n‐p transistors can also be explained. It is predicted that β goes through a minimum at a stress of ∼ 109 dyn/cm2. Suggestions concerning thermal stress on transistors in large‐scale integration are made.