Transport behavior of holes in boron delta-doped diamond structures
Transport behavior of holes in boron delta-doped diamond structures
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DOI：
10.1063/1.4775814
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发表时间：
2013-01-21
影响因子：
3.2
通讯作者：
Lang, Richard
中科院分区：
文献类型：
--
作者：
Balmer, Richard S.;Friel, Ian;Lang, Richard
利用微波等离子体化学气相沉积法合成了硼δ掺杂金刚石结构，并将其制成FET和门控霍尔条器件，以评估其电特性。完成了变温霍尔，电导率和场效应迁移率测量的详细研究。这是支持薛定谔-泊松和弛豫时间计算的基础上应用费米的黄金法则。开发了两种载流子类型的模型，其中在具有类似于1cm（2）/Vs的迁移率的δ层最低子带和具有高迁移率的体价带之间具有类似于0.2eV的激活能。这种对硼δ掺杂结构中空穴传输的新理解表明，尽管在室温下测得的霍尔迁移率高达900 cm（2）/Vs，但这大大夸大了器件的实际有用性能。(C)2013年美国物理学会。[http：//dx.doi.org/10.1063/1.4775814]
Boron delta-doped diamond structures have been synthesized using microwave plasma chemical vapor deposition and fabricated into FET and gated Hall bar devices for assessment of the electrical characteristics. A detailed study of variable temperature Hall, conductivity, and field-effect mobility measurements was completed. This was supported by Schrodinger-Poisson and relaxation time calculations based upon application of Fermi's golden rule. A two carrier-type model was developed with an activation energy of similar to 0.2 eV between the delta layer lowest subband with mobility similar to 1 cm(2)/Vs and the bulk valence band with high mobility. This new understanding of the transport of holes in such boron delta-doped structures has shown that although Hall mobility as high as 900 cm(2)/Vs was measured at room temperature, this dramatically overstates the actual useful performance of the device. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775814]