PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices
PRESiCETM: Process Engineered for Manufacturing SiC Electronic Devices
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PRESiCETM：为制造 SiC 电子设备而设计的工艺
DOI：
10.4028/www.scientific.net/msf.924.523
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
S. Syed
中科院分区：
文献类型：
--
作者：
B. Baliga;Woongje Sung;Kijeong Han;J. Harmon;A. Tucker;S. Syed
2015年，PowerAmerica赞助NCSU开发了制造功率mosfet和JBS整流器的工艺。该工艺被命名为PRESiCETM，在X-Fab铸造厂成功制造了1.2 kV额定的最先进的4H-SiC功率器件（mosfet， bidfet和JBS整流器）。此外，我们成功地将JBS反激整流器单片集成到功率MOSFET结构中，以创建功率jbfet，从而可以显着节省（~ 40%）芯片面积并将封装数量减少一半。在第二年（2016年），NCSU已经通过了在X-Fab制造这些功率器件的工艺。
PowerAmerica sponsored the development by NCSU of a process for manufacturing power MOSFETs and JBS Rectifiers in 2015. This process, named PRESiCETM, was successful in making 1.2 kV rated state-of-the-art 4H-SiC power devices (MOSFETs, BiDFETs, and JBS Rectifiers) in the X-Fab foundry. In addition, we were successful in monolithically integrating a JBS fly-back rectifier into the power MOSFET structure to create the power JBSFET which allows saving significant (~ 40 %) chip area and reducing package count in half. In the second year (2016), NCSU has qualified the process for manufacturing these power devices at X-Fab.