Temperature dependence of strain-phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis
Temperature dependence of strain-phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis
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DOI：
10.1002/jrs.5860
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发表时间：
2020-02-26
影响因子：
2.5
通讯作者：
Capellini, G.
中科院分区：
文献类型：
--
作者：
Manganelli, C. L.;Virgilio, M.;Capellini, G.
研究了Ge/Si异质外延层中Ge拉曼模应变声子系数的温度依赖性。通过分析拉曼Ge& x2500;Ge谱线和Ge晶格应变随温度的演化，我们得到了应变-声子系数随温度的线性关系。我们的研究结果提供了一个有效的方法来捕捉异质外延系统中的温度依赖的应变弛豫机制。此外，我们表明，在文献中报道的应变-声子系数值的相当大的变化可能是由于局部加热的样品，由于在μ-拉曼实验中使用的激发激光。
We investigate the temperature dependence of the Ge Raman mode strain-phonon coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature-dependent evolution of both the Raman Ge& x2500;Ge line and of the Ge lattice strain, we obtain a linear dependence of the strain-phonon coefficient as a function of temperature. Our findings provide an efficient method for capturing the temperature-dependent strain relaxation mechanism in heteroepitaxial systems. Furthermore, we show that the rather large variability reported in the literature for the strain-phonon coefficient values might be due to the local heating of the sample due to the excitation laser used in mu-Raman experiments.