Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films
Relaxorlike dielectric behavior in Ba0.7Sr0.3TiO3 thin films
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Ba0.7Sr0.3TiO3 薄膜中的类弛豫介电行为
DOI：
10.1063/1.2511367
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发表时间：
2007
影响因子：
3.2
通讯作者：
K. Kurihara
中科院分区：
文献类型：
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作者：
R. Zednik;P. McIntyre;J. Baniecki;M. Ishii;T. Shioga;K. Kurihara
我们提出了溅射沉积钛酸锶钡薄膜平面电容器的系统介电研究结果，该电容器在 20-575K 的宽温度范围内、1kHz 至 1MHz 的频率下进行测量。我们对温度和频域介电损耗峰值的观察无法在固有声子损耗的典型框架中理解。我们发现钛酸锶钡薄膜中公认的唯象居里-冯·施韦德勒介电行为（通用弛豫定律）仅适用于很窄的温度范围。与沃格尔-富尔彻表达式的完美契合表明这些电影中的放松者行为。观察到的现象的活化能表明氧离子运动在表观弛豫行为中发挥作用，尽管需要进一步的实验工作来检验这一假设。
We present the results of a systematic dielectric study for sputter deposited barium strontium titanate thin film planar capacitors measured over a wide temperature range of 20–575K for frequencies between 1kHz and 1MHz. Our observations of dielectric loss peaks in the temperature and frequency domains cannot be understood in the typical framework of intrinsic phonon losses. We find that the accepted phenomenological Curie–von Schweidler dielectric behavior (universal relaxation law) in our barium strontium titanate films is only applicable over a narrow temperature range. An excellent fit to the Vogel-Fulcher expression suggests relaxorlike behavior in these films. The activation energy of the observed phenomenon suggests that oxygen ion motion play a role in the apparent relaxor behavior, although further experimental work is required to test this hypothesis.
GHz 区域的介电弛豫和 BaTiO3 基陶瓷的相变，
DOI：
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发表时间：
2006
期刊：
J.Appl.Phys. 100
影响因子：
--
作者：
J.Li;H.Kakemoto;S.Wada;H.Kawaji;T.Tsurumi
通讯作者：
T.Tsurumi