Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3
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DOI：
10.1007/s11664-010-1500-1
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发表时间：
2011-02
影响因子：
2.1
通讯作者：
Takeyasu Saito;K. Park;K. Hirama;H. Umezawa;M. Satoh;H. Kawarada;Zhi-Quan Liu;K. Mitsuishi;K. Furuya;H. Okushi
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文献类型：
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作者：
Takeyasu Saito;K. Park;K. Hirama;H. Umezawa;M. Satoh;H. Kawarada;Zhi-Quan Liu;K. Mitsuishi;K. Furuya;H. Okushi
采用电子束蒸发SiO2或Al 2 O3栅绝缘层和Cu-金属叠层栅，在金刚石（111）面上形成H端表面导电层，制备金属氧化物半导体场效应晶体管（MOSFET）。当体载流子浓度约为1015/cm 3，B掺杂金刚石层厚度为1.5μm时，FET处理前（111）金刚石H端表面的表面载流子迁移率为35 cm 2/Vs，表面载流子浓度为1.5 × 1013/cm 2。对于SiO2栅极（0.76μm长，50μm宽），在-3.0 V栅极电压下测得的最大漏极电流为-75 mA/mm，最大漏极电流为24 mS/mm，而对于Al 2 O3栅极（0.64μm长，50μm宽），这些特性分别为-86 mA/mm和15 mS/mm。这些值是金刚石同质外延（111）MOSFET的最高直流（DC）特性。
A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal–oxide–semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO2or Al2O3gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 1015/cm3and the B-doped diamond layer was 1.5μm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm2/Vs and the surface carrier concentration was 1.5 × 1013/cm2. For the SiO2gate (0.76μm long and 50μm wide), the maximum measured drain current at a gate voltage of −3.0 V was −75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al2O3gate (0.64μm long and 50μm wide), these features were −86 mA/mm and 15 mS/mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.