Size-Dependent Resonant Cavity Light-Emitting Diodes for Collimating Concerns
Size-Dependent Resonant Cavity Light-Emitting Diodes for Collimating Concerns
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用于准直问题的尺寸相关谐振腔发光二极管
DOI：
10.7567/jjap.52.01ag03
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发表时间：
2013
影响因子：
1.5
通讯作者：
W. Yeh
中科院分区：
文献类型：
--
作者：
Y. Chu;Y. Su;C. Chao;W. Yeh
本文提出了基于 GaN 尺寸的超薄膜谐振腔发光二极管 (uT-RCLED)，具有高度准直和聚光效率。腔体由底部银镜 (∼97%) 和顶部分布式布拉格反射镜 (DBR) 以及五对 SiO2/TiO2 (∼95%) 约束。通过光束分析仪，50 µm (100 µm) uT-RCLED 的视角接近 ±51° (±47°)，并且在 ±15° 光提取锥内呈现出 8.18% (9.73%) 的最佳聚光效率，与常规非 DBR 超薄膜发光二极管 (uT-LED) (6.57%) 相比。此外，50 µm (100 µm) uT-RCLED 的绝对光输出功率为 95.26% (127.36%)，远高于 uT-LED。此外，RCLED 的微型化既不影响谐振效应，也不影响准直特性，这为 LED 微型投影仪满足最大亮度输出的集光率限制开辟了潜在的应用。
This paper presented the GaN-Based size-dependent ultrathin-film resonant cavity light-emitting diode (uT-RCLED) for highly collimation and light-collective efficiency. The cavity was bound by bottom silver mirror (∼97%) and top distributed Bragg reflector (DBR) with five pairs of SiO2/TiO2 (∼95%). The viewing angle of 50 µm (100 µm) uT-RCLED was near ±51° (±47°) through the beam profiler and presented the best light-collective efficiency of 8.18% (9.73%) within ±15° light extraction cone contrasted with regular non-DBR ultrathin-film light-emitting diodes (uT-LEDs) (6.57%). In addition, the absolute light output power of the 50 µm (100 µm) uT-RCLED was 95.26% (127.36%) much higher than the uT-LED. Besides, the micromation of RCLED influenced neither the resonant effect nor the collimating properties which opens a potential application for the LED microprojectors to meet the etendue limitation for maximum luminance output.