Halide Perovskites – Optoelectronic and Structural Characterization Methods
Halide Perovskites – Optoelectronic and Structural Characterization Methods
复制标题
卤化物钙钛矿 – 光电和结构表征方法
DOI:
10.1002/aenm.202001812
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发表时间:
2020
影响因子:
27.8
通讯作者:
Stranks, Samuel D.
中科院分区:
文献类型:
--
作者:
Fenning, David P.;Schulz, Philip;Stranks, Samuel D.
Research into the halide perovskites has exploded over the past decade as their combination of remarkable optoelectronic properties have come to light. As halide perovskite materials come of age, increasing effort is being dedicated to their development into devices, and an in-depth understanding of their physical and functional properties spanning from the atomic to system levels is required. The need for deeper understanding of halide perovskite materials is especially critical because they are currently hampered by their sensitivity to interfacial and bulk decomposition and phase transformation reactions despite their often-ascribed defect tolerance or “self-healing” capabilities. Their sensitivity to perturbations also means that halide perovskites often require special care in characterization of their fundamental and technological properties, precisely because changes in the material are possible under a host of environmental and electromagnetic stressors, including many that are inherent in traditional characterization modalities. This special issue focuses on insights and opportunities in the characterization of perovskites, ranging from recent advances in atomic-resolution microscopy, to new approaches