Crossed Andreev reflection in a graphene bipolar transistor
Crossed Andreev reflection in a graphene bipolar transistor
复制标题
DOI：
10.1103/physrevlett.100.147001
复制
发表时间：
2008-04-11
影响因子：
8.6
通讯作者：
Cayssol, J.
中科院分区：
文献类型：
--
作者：
Cayssol, J.
我们研究了由窄超导体连接的两个石墨烯引线之间的交叉Andreev反射。当引线分别为n型和p型时，我们发现电子弹性共隧穿和局部Andreev反射都被消除，即使在没有任何谷同位旋或自旋极化的情况下。我们进一步预测作为石墨烯-超导体界面之间的距离的函数的对角电导和交叉电导的振荡。
We investigate the crossed Andreev reflections between two graphene leads connected by a narrow superconductor. When the leads are, respectively, of the n and p type, we find that electron elastic cotunneling and local Andreev reflection are both eliminated even in the absence of any valley-isospin or spin polarizations. We further predict oscillations of both diagonal and cross conductances as a function of the distance between the graphene-superconductor interfaces.