The effect of flash lamp annealing on Fe implanted ZnO single crystals
The effect of flash lamp annealing on Fe implanted ZnO single crystals
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DOI：
10.1063/1.2427103
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发表时间：
2007-02
影响因子：
3.2
通讯作者：
K. Potzger;W. Anwand;H. Reuther;Shengqiang Zhou;G. Talut;G. Brauer;W. Skorupa;J. Fassbender
中科院分区：
文献类型：
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作者：
K. Potzger;W. Anwand;H. Reuther;Shengqiang Zhou;G. Talut;G. Brauer;W. Skorupa;J. Fassbender
研究了闪光灯退火对3.6at. %的Fe。对于中等的光功率，退火引起的表面缺陷可以在注入区域内不产生第二相。然而，在相同的退火温度下，离子束诱导的开放体积缺陷的尺寸开始增加。对于所施加的最高光功率，即，卢瑟福背散射谱的最小沟道产率反映的离子束诱导的晶格无序从76%降低到46%，并且开口体积缺陷被退火。同时，Fe 3+分数以Fe 2+状态为代价而增加。弱的铁磁性能，主要是与纳米粒子诱导。
The effect of flash lamp annealing applied to ZnO single crystals implanted with 3.6 at. % Fe has been studied. For intermediate light power, the implantation-induced surface defects could be annealed without creation of secondary phases within the implanted region. At the same annealing temperatures, however, ion-beam-induced open volume defects start to increase in size. Recrystallization is initiated for the highest light power applied, i.e., the ion-beam-induced lattice disorder reflected by the minimum channeling yield of Rutherford backscattering spectroscopy decreases from 76% to 46% and the open volume defects are annealed. At the same time, the Fe3+ fraction increases at the cost of the Fe2+ states. Weak ferromagnetic properties that are mainly associated with nanoparticles are induced.